Chemical routes to GeS2 and GeSe2 nanowires.

Nanowires fine tunable fabrication by varying the concentration ratios, the etchant and the plating spices in metal-assisted chemical etching of silicon wafer.

The metal-assisted chemical etching (MACE) was used to synthesis silicon nanowires. The effect of etchant concentration, etching and chemical plating time and doping density on silicon nanowires length were investigated. It is held that the increasing of HF and H2O2 concentrations lead to etching rate increment and formation of wire-like structure. The results show that, the appropriate ratio o...

Simulation of pressure-induced polyamorphism in a chalcogenide glass GeSe2

The pressure-induced insulator-metal transition in amorphous GeSe2 (a-GeSe2) is studied using an ab initio constant pressure molecular-dynamic simulation. a-GeSe2 transforms gradually to an amorphous metallic state under the application of pressure. The transition is reversible, and is associated with a gradual change from fourfold to sixfold Ge coordination, and from twofold to fourfold Se coo...

Preparation and Characterization of Tin Oxide Nanowires

The aim of this research is preparation of SnO2 nanowires by means of Thermal chemical reaction vapor transport deposition (TCRVTD) method from SnO powders. The morphology, chemical composition and microstructure properties of the nanowires are characterized using field emission scanning electron microscope (FE-SEM), EDS, and XRD. The XRD diffraction patterns reveal that the SnO2 nanowires have...

Improving Gas Sensing Properties of Tin Oxide Nanowires Palladium-Coated Using a Low Cost Technique

Thin films of SnO2 nanowires were successfully prepared by using chemical vapor deposition (CVD) process on quartz substrates. Afterwards, a thin  layer of palladium (Pd) as a catalyst was coated on top of nanowires. For the deposition of Pd, a simple and low cost technique of spray pyrolysis was employed, which caused an intensive enhancement on the sensing response of fabricated sensors...

Synthesis and Characterization of Nanowires Zinc Oxide with Different Temperatures